Memory system and method of driving memory system using zone voltages

ABSTRACT

A method is provided for driving a nonvolatile memory device, including multiple strings, where each string is formed by penetrating plate-shaped word lines stacked on a substrate. The method includes configuring the word lines of a string in multiple zones based on zone configuration information, and applying zone voltages to the zones, respectively. The zone configuration information is varied according to a mode of operation.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a Divisional of U.S. application Ser. No.14/056,268, filed Oct. 17, 2013, in which a claim for priority under 35U.S.C. §119 is made to Korean Patent Application No. 10-2013-0015295filed Feb. 13, 2013, in the Korean Intellectual Property Office, theentire contents of which are hereby incorporated by reference.

BACKGROUND

Embodiments of the inventive concepts described herein relate to amemory system and a driving method thereof.

Semiconductor memory devices may be volatile or nonvolatile memorydevices. A nonvolatile semiconductor memory device may retain datastored therein even when powered off. The nonvolatile memory device maybe permanent or reprogrammable, depending upon the fabricationtechnology used. The nonvolatile memory device may be used for userdata, program, and microcode storage in a wide variety of applicationsin the computer, avionics, telecommunications, and consumer electronicsindustries, for example.

SUMMARY

One aspect of embodiments of the inventive concept provides a method fordriving a nonvolatile memory device, including multiple strings, whereeach string is formed by penetrating plate-shaped word lines stacked ona substrate. The method includes configuring the word lines of a stringin multiple zones based on zone configuration information, and applyingzone voltages to the zones, respectively. The zone configurationinformation is varied according to a mode of operation.

The zone configuration information may be generated in the nonvolatilememory device. Alternatively, the zone configuration information may beprovided from an external device.

The method may further include determining whether the zoneconfiguration is required.

The mode of operation may include one of a program mode, a read mode oran erase mode. The zone configuration information during the programmode may be the same as the zone configuration information during theread mode, and the zone configuration information during the read andprogram modes may be different from the zone configuration informationduring the erase mode.

The method may further include applying a selection voltage to aselected word line during a read operation or a program operation.Unselected word lines may be configured into the zones, and applyingzone voltages to the zones may include applying the zone voltages to theconfigured zones of the unselected word lines.

The method may further include generating the selection voltage, andgenerating the zone voltages.

The method may further include applying an erase voltage to thesubstrate during an erase operation, while applying the zone voltages tothe configured zones. The method may further include changing the zoneconfiguration information when erase speeds of memory cellscorresponding to the zones are different.

Configuring the word lines to the zones based on zone configurationinformation may include selecting one of the word lines to which one ofthe zone voltages is to be applied, based on the zone configurationinformation.

Another aspect of embodiments of the inventive concept provides a memorysystem including a nonvolatile memory device and a memory controller.The nonvolatile memory device has multiple memory blocks, each memoryblock having multiple strings formed by penetrating plate-shaped wordlines stacked on a substrate. The memory controller is configured tocontrol the nonvolatile memory device. The nonvolatile memory devicefurther includes a zone controller configured to control configurationof the word lines to a plurality of zones based on zone configurationinformation, and multiple zone voltage generators configured to generatezone voltages corresponding to the zones. The zone configurationinformation is varied according to a mode of operation of thenonvolatile memory device.

The nonvolatile memory device may further include an address decoderconfigured to select one of the memory blocks based on an input addressand to provide the zone voltages to corresponding zones based on thezone configuration information for the selected memory block.

The nonvolatile memory device may further include a selection voltagegenerator configured to generate a selection voltage to be applied to aselected one of the word lines during a program operation or a readoperation.

The memory controller may be configured to determine whether a change ofthe zone configuration information is required, and to send new zoneconfiguration information to the nonvolatile memory device based on thedetermination result.

Another aspect of embodiments of the inventive concept provides anonvolatile memory device, including a memory cell array, a voltagegenerating circuit and an address decoder. The memory cell arrayincludes a memory block having multiple strings and multiple word lines,where the strings include corresponding pillars, and memory cells areformed at intersections of the pillars and the word lines, respectively.The voltage generating circuit is configured to generate a selectionvoltage and multiple zone voltages, the selection voltage being appliedto a selected word line of the word lines in the memory block during aprogram operation or a read operation, and the zone voltages beingapplied to multiple zones, each zone including at least one unselectedword line. The address decoder is configured to transfer the selectionvoltage to the selected word line and the zone voltages to the zones ofthe unselected word lines, respectively.

The nonvolatile memory device may further include control logicconfigured to determine the zones and to control application of theselection voltage and the plurality of zone voltages. The addressdecoder may be further configured to decide whether to apply theselection voltage or one of the zone voltages based on an address and azone voltage selection signal received from the control logic.

The zone voltages provide optimal program pass voltages or optimal readpass voltages corresponding to the zones during the program or readoperations, respectively.

The voltage generating circuit may be further configured to generate anerase voltage, the erase voltage being applied to a substrate of thememory block and other zone voltages being applied to other zones duringan erase operation.

BRIEF DESCRIPTION OF THE FIGURES

The above and other objects and features will become apparent from thefollowing description with reference to the following figures, whereinlike reference numerals refer to like parts throughout the variousfigures unless otherwise specified, and wherein:

FIG. 1 is a block diagram schematically illustrating a nonvolatilememory device, according to an embodiment of the inventive concept;

FIG. 2 is a perspective view of a memory block of FIG. 1, according toan embodiment of the inventive concept;

FIG. 3 is a cross-sectional view of a pillar, according to an embodimentof the inventive concept;

FIG. 4 is a diagram schematically illustrating zone organization duringa program operation or a read operation of a nonvolatile memory deviceof FIG. 1, according to an embodiment of the inventive concept;

FIG. 5 is a diagram schematically illustrating zone organization duringan erase operation of a nonvolatile memory device of FIG. 1, accordingto an embodiment of the inventive concept;

FIG. 6 is a flow chart schematically illustrating a method of driving anonvolatile memory device, according to an embodiment of the inventiveconcept;

FIG. 7 is a flow chart schematically illustrating a method of erasing anonvolatile memory device, according to an embodiment of the inventiveconcept;

FIG. 8 is a block diagram schematically illustrating a memory system,according to an embodiment of the inventive concept;

FIG. 9 is a block diagram schematically illustrating a solid statedrive, according to an embodiment of the inventive concept;

FIG. 10 is a block diagram schematically illustrating an eMMC, accordingto an embodiment of the inventive concept; and

FIG. 11 is a block diagram schematically illustrating a UFS system,according to an embodiment of the inventive concept.

DETAILED DESCRIPTION

Embodiments will be described in detail with reference to theaccompanying drawings. The inventive concept, however, may be embodiedin various different forms, and should not be construed as being limitedonly to the illustrated embodiments. Rather, these embodiments areprovided as examples so that this disclosure will be thorough andcomplete, and will fully convey the concept of the inventive concept tothose skilled in the art. Accordingly, known processes, elements, andtechniques are not described with respect to some of the embodiments ofthe inventive concept. Unless otherwise noted, like reference numeralsdenote like elements throughout the attached drawings and writtendescription, and thus descriptions will not be repeated. In thedrawings, the sizes and relative sizes of layers and regions may beexaggerated for clarity.

Embodiments will be described in detail with reference to theaccompanying drawings. The inventive concept, however, may be embodiedin various different forms, and should not be construed as being limitedonly to the illustrated embodiments. Rather, these embodiments areprovided as examples so that this disclosure will be thorough andcomplete, and will fully convey the concept of the inventive concept tothose skilled in the art. Accordingly, known processes, elements, andtechniques are not described with respect to some of the embodiments ofthe inventive concept. Unless otherwise noted, like reference numeralsdenote like elements throughout the attached drawings and writtendescription, and thus descriptions will not be repeated. In thedrawings, the sizes and relative sizes of layers and regions may beexaggerated for clarity.

It will be understood that, although the terms “first,” “second,”“third,” etc., may be used herein to describe various elements,components, regions, layers and/or sections, these elements, components,regions, layers and/or sections should not be limited by these terms.These terms are only used to distinguish one element, component, region,layer or section from another region, layer or section. Thus, a firstelement, component, region, layer or section discussed below could betermed a second element, component, region, layer or section withoutdeparting from the teachings of the inventive concept.

Spatially relative terms, such as “beneath,” “below,” “lower,” “under,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. It will beunderstood that the spatially relative terms are intended to encompassdifferent orientations of the device in use or operation in addition tothe orientation depicted in the figures. For example, if the device inthe figures is turned over, elements described as “below” or “beneath”or “under” other elements or features would then be oriented “above” theother elements or features. Thus, the exemplary terms “below” and“under” can encompass both an orientation of above and below. The devicemay be otherwise oriented (rotated 90 degrees or at other orientations)and the spatially relative descriptors used herein interpretedaccordingly. In addition, it will also be understood that when a layeris referred to as being “between” two layers, it can be the only layerbetween the two layers, or one or more intervening layers may also bepresent.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of the inventiveconcept. As used herein, the singular forms “a,” “an” and “the” areintended to include the plural forms as well, unless the context clearlyindicates otherwise. It will be further understood that the terms“comprises” and/or “comprising,” when used in this specification,specify the presence of stated features, integers, steps, operations,elements, and/or components, but do not preclude the presence oraddition of one or more other features, integers, steps, operations,elements, components, and/or groups thereof. As used herein, the term“and/or” includes any and all combinations of one or more of theassociated listed items. Also, the term “exemplary” is intended to referto an example or illustration.

It will be understood that when an element or layer is referred to asbeing “on,” “connected to,” “coupled to,” or “adjacent to” anotherelement or layer, it can be directly on, connected, coupled, or adjacentto the other element or layer, or intervening elements or layers may bepresent. In contrast, when an element is referred to as being “directlyon,” “directly connected to,” “directly coupled to,” or “immediatelyadjacent to” another element or layer, there are no intervening elementsor layers present.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the art to which this inventive concept belongs. Itwill be further understood that terms, such as those defined in commonlyused dictionaries, should be interpreted as having a meaning that isconsistent with their meaning in the context of the relevant art and/orthe present specification and will not be interpreted in an idealized oroverly formal sense unless express+ly so defined herein.

FIG. 1 is a block diagram schematically illustrating a nonvolatilememory device 100, according to an embodiment of the inventive concept.Referring to FIG. 1, a nonvolatile memory device 100 includes a memorycell array 110, a voltage generating circuit 120, an address decoder130, an input/output circuit 140, and control logic 150.

The memory cell array 110 is connected to the address decoder 130through word lines, at least one string selection line SSL, and at leastone ground selection line GSL. The memory cell array 110 is alsoconnected to the input/output circuit 140. The memory cell array 110 mayinclude multiple memory blocks BLK1 to BLKz.

Each of the memory blocks BLK1 to BLKz may include multiple stringswhich are arranged along a first direction and a second directiondifferent from the first direction and along a third direction (adirection perpendicular to a plane formed by the first and seconddirections) to have a three-dimensional structure. Here, each stringincludes at least one string selection transistor, multiple memorycells, and at least one ground selection transistor stacked on asubstrate. Each memory cell may store at least one data bit.

The voltage generating circuit 120 generates a selection voltage Vsel,multiple zone voltages Vz1 to VzK (K being an integer of 2 or more), andan erase voltage Vers. The selection voltage Vsel is applied to aselected word line during a program operation or a read operation, andmay be one of a program voltage, a read voltage, and a verificationvoltage. The zone voltages Vz1 to VzK may be word line voltagesrespectively corresponding to zones. Here, zones refer to groups of wordlines in a selected memory block.

In the depicted embodiment, the voltage generating circuit 120 includesa selection voltage generator 121, zone voltage generators 122-1 to122-k, and an erase voltage generator 123. The selection voltagegenerator 121 generates the selection voltage Vsel according to acontrol of the control logic 150.

Although not shown in FIG. 1, the selection voltage generator 121 mayinclude a high voltage generator to generate a high voltage such as aprogram voltage, a low voltage generator to generate a low voltage suchas a read voltage, and a negative voltage generator to generate anegative voltage.

The zone voltage generators 122-1 to 122-k generate the zone voltagesVz1 to VzK, respectively, under control of the control logic 150. Duringa program/read operation, the zone voltages Vz1 to VzK may generateoptimal program pass voltages or optimal read pass voltages respectivelycorresponding to the different zones. These optimal program passvoltages and optimal program read voltages may be determined, at leastin part, by the proximity of the word lines in the different zones tothe selected word line and/or to the substrate.

The erase voltage generator 123 generates the erase voltage Vers undercontrol of the control logic 150. The erase voltage Vers may be appliedto a substrate of a memory block to be erased in an erase operation.Various zone voltages Vz1 to VzK may also be applied to different zonesin the erase operation.

The address decoder 130 is connected to the memory cell array 110through the word lines, the string selection line SSL and the groundselection line GSL. The address decoder 130 may select the word lines,the string selection line SSL and the ground selection line GSL using adecoded row address. The address decoder 130 may decode a column addressof an input address ADDR to provide a decoded column address DCA. Thedecoded column address DCA may be provided to the input/output circuit140. In exemplary embodiments, the address decoder 130 may include a rowdecoder, a column decoder, an address buffer, and so on.

During a program operation or a read operation, the address decoder 130transfers the selection voltage Vsel to a selected word line and thezone voltages Vz1 to VzK to zones of unselected word lines,respectively. During an erase operation, the address decoder 130transfers the zone voltages Vz1 to VzK to zones of a selected memoryblock. The erase voltage Vers is applied to a substrate of the memoryblock to be erased.

The address decoder 130 may be configured to vary, adjust, change and/orcontrol zones during a program, read or erase operation under control ofthe control logic 150. For example, the address decoder 130 may beconfigured to decide whether to apply the selection voltage Vsel or oneof the zone voltages Vz1 to VzK to each word line based on an addressand a zone voltage selection signal ZVSS. The zone voltage selectionsignal ZVSS is provided from the control logic 150.

The input/output circuit 140 is connected to the memory cell array 110through bit lines. The input/output circuit 140 is configured to receivethe decoded column address DCA from the address decoder 130. Theinput/output circuit 140 may select the bit lines using the decodedcolumn address DCA.

The input/output circuit 140 may receive data from an external device(e.g., a memory controller) to store in the memory cell array 110. Theinput/output circuit 140 may read data from the memory cell array 110 tooutput to the external device. Also, the input/output circuit 140 mayread data from a first area of the memory cell array 110 to store it ina second area of the memory cell array 110. For example, theinput/output circuit 140 may be configured to perform a copy-backoperation.

The control logic 150 controls overall operation of the nonvolatilememory device 100 including program operations, read operations, eraseoperations, and so on. The control logic 150 may operate in response tocontrol signals or commands provided from the external device. In thedepicted embodiment, the control logic 150 includes a zone controller152 to vary/change/adjust/control zone configuration according to zoneconfiguration information ZCI. The zone controller 152 generates thezone voltage selection signal ZVSS according to the zone configurationinformation ZCI.

In exemplary embodiments, the zone configuration information ZCI may begenerated in the nonvolatile memory device 100. In other exemplaryembodiments, the zone configuration information ZCI may be provided froman external device.

In exemplary embodiments, the zone configuration information ZCI may bevariable according to modes of operation of the nonvolatile memorydevice 100, such as a program mode, a read mode, an erase mode, and soon. Also, in exemplary embodiments, when erase speeds of memory cellscorresponding to zones are different, the zone controller 152 may changethe zone configuration information ZCI.

Generally, a conventional nonvolatile memory device includes fixed zonesperforming different word line biasing according to variations in a holesize of a string. In the event that a word line is controlled,disturbance and reliability characteristics may deteriorate or adifference between erase speeds may be generated. In comparison, thenonvolatile memory device 100 according to an embodiment of theinventive concept may control zones according to modes of operation toperform optimal program, read, and erase operations. That is, thenonvolatile memory device 100 may control zones according to modes ofoperation and/or relative positioning of word lines to minimize sideeffects according to variations in a hole size.

FIG. 2 is a perspective view of an illustrative memory block BLK of FIG.1, according to an embodiment of the inventive concept. Referring toFIG. 2, four sub blocks are formed on a substrate. Each sub block isformed by stacking at least one plate-shaped ground selection line GSL,multiple plate-shaped word lines, and at least one plate-shaped stringselection line SSL on the substrate between word line cuts. The stringselection lines SSL may be separated by string selection line cuts, andthe word lines WL may be separated by word line cuts. Although not shownin FIG. 2, each word line cut may include a common source line CSL. Inexemplary embodiments, the common source lines CSL included in the wordline cuts may be interconnected. An illustrative string is formed by apillar 113 connected with a bit line BL and penetrating the at least onestring selection line SSL, the word lines, and the at least one groundselection line GSL.

In FIG. 2, a structure between word line cuts may be a sub block.However, embodiments of the inventive concept are not limited thereto.For example, a structure between a word line cut and a string selectionline cut may be a sub block.

The memory block BLK of the inventive concept may be implemented to havea merged word line structure where two word lines are merged to one.

FIG. 3 is a cross-sectional view of a pillar according to an embodimentof the inventive concept. Referring to FIG. 3, each pillar 113 includesa channel film 114 and an insulation material 115. The channel film 114may be formed of a p-type silicon material, for example. The diameter ofone end of each pillar 113 adjacent to a bit line may be larger than thediameter of the other end of each pillar 113 adjacent to a substrate111. That is, each pillar 113 may be tapered toward the substrate 111.As illustrated in FIG. 3, memory cells MC are formed where each pillar113 penetrates word lines. Each memory cell MC thus includes channelfilm 114, insulation material 115, and an information storage layer 116.

As illustrated in FIG. 3, because each pillar 113 is tapered toward thesubstrate 111, electrical characteristics of the memory cells MC varyaccording to their structural locations. According to embodiments of theinventive concept, zone may be determined according to the structurallocation (or, the location of a corresponding word line). In thenonvolatile memory device 100, for example, a zone may beadjusted/changed/controlled according to modes of operation to haveoptimal performance. That is, a zone may not be fixed. Thus, it ispossible to configure zones freely based on zone configurationinformation ZCI.

FIG. 4 is a diagram schematically illustrating zone organization duringa program or read operation of nonvolatile memory device 100 of FIG. 1,according to an embodiment of the inventive concept. For ease ofdescription, it is assumed that the number of word lines is eight (wordlines WL0 to WL7) and that word line WL3 is selected during a program orread operation. Referring to FIG. 4, zone controller 152 (refer toFIG. 1) may make four zones Zone1 to Zone4 during a read or programoperation.

For example, a first zone Zone1 may be formed of a word line WL0 closestto the substrate 111 (refer to FIG. 3), a second zone Zone2 may consistof two word lines WL1 and WL2, a third zone Zone3 may be formed of threeword lines WL4, WL5 and WL6, and a fourth zone Zone4 may be constitutedof a word line WL7 furthest from the substrate 111. Zone voltages Vz1 toVz4 are respectively applied to the first through fourth zones Zone1 toZone4. Here, the word lines WL0 to WL7 are sequentially stacked on thesubstrate.

The zone organization during a read/program operation illustrated inFIG. 4 is an example. The zone controller 152 may variously decide thenumber of zones and the number of word lines in each zone.

In FIG. 4, the zone organization during the program operation may be thesame as that during the read operation. However, embodiments of theinventive concept are not limited thereto. For example, the zoneorganization during the program operation may be different from thatduring the read operation.

FIG. 5 is a diagram schematically illustrating zone organization duringan erase operation of a nonvolatile memory device 100 of FIG. 1. Again,for ease of description, it is assumed that the number of word lines iseight. Referring to FIG. 5, the zone controller 152 (refer to FIG. 1)may make three zones Zone1 to Zone3 during an erase operation.

For example, a first zone Zone1 closest to the substrate 111 (refer toFIG. 3) may be formed of three word lines WL0 to WL2, a second zoneZone2 may consist of two word lines WL3 and WL4, and a third zone Zone3may be formed of three word lines WL5, WL6 and WL7. Zone voltages Vz1 toVz3 are respectively applied to the first through third zones Zone1 toZone3. Here, the word lines WL0 to WL7 are sequentially stacked on thesubstrate 111.

The zone organization illustrated in FIG. 5 is an example. The zonecontroller 152 may variously decide the number of zones and the numberof word lines in each zone during the erase operation.

FIG. 6 is a flow chart schematically illustrating a method of driving anonvolatile memory device 100, according to an embodiment of theinventive concept. Below, a method of driving the nonvolatile memorydevice 100 according to an embodiment of the inventive concept will bemore fully described with reference to FIGS. 1 to 6.

In operation S110, the zone controller 152 configures zones ofunselected word lines based on zone configuration information ZCI duringa program or read operation. The zone configuration information ZCI maybe provided from an external device or internally generated. Forexample, the zone configuration information ZCI may be provided from theexternal device according to management information of a nonvolatilememory device 100, such as block erase information, cell characteristicinformation, temperature information, power information, noiseinformation, etc. In operation S120, a program or read operation isperformed by applying a selection voltage Vs to a selected word line andzone voltages Vz1 to VzK to configured zones.

With the driving method of a nonvolatile memory device of embodiments ofthe inventive concept, zones may be configured based on the zoneconfiguration information ZCI to perform a program or read operation.

FIG. 7 is a flow chart schematically illustrating a method of erasingthe nonvolatile memory device 100, according to an embodiment of theinventive concept. Below, a method of erasing the nonvolatile memorydevice 100 according to an embodiment of the inventive concept will bemore fully described with reference to FIGS. 1 to 5 and 7.

In operation S210, the zone controller 152 controls the address decoder130 to configure zones of word lines based on zone configurationinformation ZCI. In exemplary embodiments, when zone erase speeds aredifferent, the zone configuration information ZCI may be changedaccording to a result of checking a location of a state of a specificmemory cell. In operation S220, an erase operation is performed byapplying an erase voltage Vers to a substrate and zone voltages Vz1 toVzK to configured zones, respective.

With the erase method of a nonvolatile memory device of embodiments ofthe inventive concept, zones may be configured based on the zoneconfiguration information ZCI to perform an erase operation.

FIG. 8 is a block diagram schematically illustrating a memory system 10,according to an embodiment of the inventive concept.

Referring to FIG. 8, a memory system 10 includes a nonvolatile memorydevice and a memory controller 200 controlling the nonvolatile memorydevice 100. The memory controller 200 may determine whether to changezone configurations during driving of the nonvolatile memory device 100,and may provide the nonvolatile memory device 100 with new zoneconfiguration information ZCI according to the determination result. Thezone controller 152 of the nonvolatile memory device 100 may configurezones based on the new zone configuration information ZCI. Afterwards,an operation requested by the memory controller 200 may be performed.

In exemplary embodiments, the memory controller 200 may determinewhether zone configuration information ZCI has changed, based oninformation indicating a degree of deterioration of a memory block to bedriven.

In exemplary embodiments, the memory controller 200 may determinewhether zone configuration information ZCI is changed, in considerationof an external circumstance of the memory system 10. Here, the externalcircumstance of the memory system 10 may include a temperature of thememory system 10, a temperature of the nonvolatile memory device 100,noise, a power state, etc.

The memory system 10 according to an embodiment of the inventive conceptmay determine whether to change zone configuration information ZCI, andthen change the zone configuration information ZCI according to thedetermination result. Thus, it is possible to drive the nonvolatilememory device 100 optimally.

Embodiments of the inventive concept are applicable to a solid statedrive (SSD), for example.

FIG. 9 is a block diagram schematically illustrating a solid statedrive, according to an embodiment of the inventive concept. Referring toFIG. 9, a solid state drive (SSD) 1000 includes multiple flash memorydevices 1100 and an SSD controller 1200. The flash memory devices 1100are supplied with an external high voltage VPPx. Each of the flashmemory devices 1100 may be implemented to configure zone organizationdifferently according to modes of operation described above withreference to FIGS. 1 to 7. The SSD controller 1200 may be connected tothe flash memory devices 1100 through multiple channels CH1 to CHi (ibeing an integer of 2 or more). In the depicted embodiment, the SSDcontroller 1200 includes at least one processor 1210, a buffer memory1220, a host interface 1250, and an NVM interface 1260 (e.g., flashinterface).

The SSD 1000 according to an embodiment of the inventive concept maysatisfy an optimal driving condition by configuring zone organizationdifferently according to modes of operation.

Embodiments of the inventive concept are applicable to an embedded MMC(hereinafter, referred to as eMMC).

FIG. 10 is a block diagram schematically illustrating an eMMC accordingto an embodiment of the inventive concept. Referring to FIG. 10, an eMMC2000 includes at least one NAND flash memory device 2100 and controller2200 integrated in a chip. The NAND flash memory device 2100 may be asingle data rate (SDR) NAND flash memory device or a double data rate(DDR) NAND flash memory device, for example. In exemplary embodiments,the NAND flash memory device 2100 may include NAND flash memory chips.Herein, the NAND flash memory device 2100 may be implemented by stackingthe NAND flash memory chips in one package (e.g., Fine-pitch Ball GridArray (FBGA), etc.). Each of the NAND flash memory devices may beimplemented to configure zone organization differently according tomodes of operation described with reference to FIGS. 1 to 7.

The controller 2200 may be connected with the NAND flash memory device2100 via multiple channels. In the depicted embodiment, the controller2200 includes at least one controller core 2210, a host interface 2250,and a NAND interface 2260. The controller core 2210 controls overalloperation of the eMMC 2000. The host interface 2250 is configured tointerface between the controller 2210 and a host 2300. The NANDinterface 2260 is configured to provide an interface between the NANDflash memory device 2100 and the controller 2200. In exemplaryembodiments, the host interface 2250 may be a parallel interface (e.g.,an MMC interface). In other exemplary embodiments, the host interface2250 of the eMMC 2000 may be a serial interface (e.g., UHS-II, UFS,etc.).

The eMMC 2000 receives power supply voltages Vcc and Vccq from the host2300. Herein, the power supply voltage Vcc (e.g., about 3.3V) issupplied to the NAND flash memory device 2100 and the NAND interface2260, and the power supply voltage Vccq (e.g., about 1.8V/3.3V) issupplied to the controller 2200.

The eMMC 2000 according to an embodiment of the inventive concept isapplicable to small-sized and low-power mobile products (e.g., Galaxy S®series, Galaxy Note® series, iPhone®, iPad®, Nexus, etc.).

Embodiments of the inventive concept are applicable to universal flashstorage (UFS).

FIG. 11 is a block diagram schematically illustrating a UFS system 3000,according to an embodiment of the inventive concept. Referring to FIG.11, a UFS system 3000 includes a UFS host 3100, UFS devices 3200 and3300, an embedded UFS device 3400, and a removable UFS card 3500. TheUFS host 3100 may be an application processor of a mobile device, forexample. Each of the UFS host 3100, the UFS devices 3200 and 3300, theembedded UFS device 3400, and the removable UFS card 3500 maycommunicate with external devices through the UFS protocol. At least oneof the UFS devices 3200 and 3300, the embedded UFS device 3400, and theremovable UFS card 3500 may include a nonvolatile memory device 100 ofFIG. 1.

Meanwhile, the embedded UFS device 3400 and the removable UFS card 3500may perform communications using protocols different from the UFSprotocol. The UFS host 3100 and the removable UFS card 3500 maycommunicate through various card protocols (e.g., UFDs, MMC, securedigital (SD), mini SD, Micro SD, etc.).

While the inventive concept has been described with reference toexemplary embodiments, it will be apparent to those skilled in the artthat various changes and modifications may be made without departingfrom the spirit and scope of the present invention. Therefore, it shouldbe understood that the above embodiments are not limiting, butillustrative.

What is claimed is:
 1. A method of driving a nonvolatile memory device, comprising a plurality of strings, each string formed by penetrating plate-shaped word lines stacked on a substrate, the method comprising: configuring the word lines of a string in a plurality of zones based on zone configuration information, wherein each of the zones as configured by the zone configuration information includes at least one word line, and at least two word lines are grouped in a same zone among the plurality of zones; and applying respective zone voltages to the zones such that the word lines of each zone receive a same respective zone voltage, wherein the zone configuration information is varied between at least a first mode of operation and a second mode of operation, wherein a grouping of at least two word lines in the same zone of the first mode of operation is different than a grouping of at least two word lines in the same zone of the second mode of operation.
 2. The method of claim 1, wherein the zone configuration information is generated in the nonvolatile memory device.
 3. The method of claim 1, wherein the zone configuration information is provided from an external device.
 4. The method of claim 3, further comprising: determining whether the zone configuration is required.
 5. The method of claim 1, wherein the first mode of operation comprises one of a program mode, a read mode or an erase mode, and the second mode of operation comprises a different one of the program mode, the read mode or the erase mode.
 6. The method of claim 5, wherein the zone configuration information during the program mode is the same as the zone configuration information during the read mode, and wherein the zone configuration information during the read and program modes is different from the zone configuration information during the erase mode.
 7. The method of claim 1, further comprising: applying a selection voltage to a selected word line during a read operation or a program operation, wherein unselected word lines are configured into the plurality of zones, and applying zone voltages to the zones comprises applying the zone voltages to the configured zones of the unselected word lines.
 8. The method of claim 7, further comprising: generating the selection voltage; and generating the zone voltages.
 9. The method of claim 1, further comprising: applying an erase voltage to the substrate during an erase operation, while applying the zone voltages to the configured zones.
 10. The method of claim 9, further comprising: changing the zone configuration information when erase speeds of memory cells corresponding to the zones are different.
 11. The driving method of claim 1, wherein configuring the word lines to a plurality of zones based on zone configuration information comprises: selecting one of the word lines to which one of the zone voltages is to be applied, based on the zone configuration information.
 12. The method of claim 1, further comprising: applying an erase voltage to the substrate during an erase operation, while applying the zone voltages to the configured zones; and changing the zone configuration information when erase speeds of memory cells corresponding to the zones are different.
 13. A memory system, comprising: a nonvolatile memory device comprising a plurality of memory blocks, each memory block having a plurality of strings formed by penetrating plate-shaped word lines stacked on a substrate; and a memory controller configured to control the nonvolatile memory device, wherein the nonvolatile memory device further comprises: a zone controller configured to control configuration of the word lines to a plurality of zones based on zone configuration information, wherein each of the zones as configured by the zone configuration information includes at least one word line, and at least two word lines are grouped in a same zone among the plurality of zones; and a plurality of zone voltage generators configured to generate respective zone voltages corresponding to the zones such that the word lines of each zone receive a same respective zone voltage, wherein the zone configuration information is varied between at least a first mode of operation and a second mode of operation of the nonvolatile memory device, wherein a grouping of at least two word lines in the same zone of the first mode of operation is different than a grouping of at least two word lines in the second mode of operation.
 14. The memory system of claim 13, wherein the nonvolatile memory device further comprises: an address decoder configured to select one of the memory blocks based on an input address and to provide the zone voltages to corresponding zones based on the zone configuration information for the selected memory block.
 15. The memory system of claim 13, wherein the nonvolatile memory device further comprises: a selection voltage generator configured to generate a selection voltage to be applied to a selected one of the word lines during a program operation or a read operation.
 16. The memory system of claim 13, wherein the memory controller is configured to determine whether a change of the zone configuration information is required, and to send new zone configuration information to the nonvolatile memory device based on the determination result.
 17. A method of driving a nonvolatile memory device, comprising a plurality of strings, each string formed by penetrating plate-shaped word lines stacked on a substrate, the method comprising: configuring the word lines of a string in a plurality of zones based on zone configuration information; and applying zone voltages to the zones, respectively, wherein the zone configuration information is varied according to a mode of operation, wherein the mode of operation comprises one of a program mode, a read mode or an erase mode, and wherein the zone configuration information during the program mode is the same as the zone configuration information during the read mode, and wherein the zone configuration information during the read and program modes is different from the zone configuration information during the erase mode.
 18. The method of claim 17, wherein the zone configuration information is generated in the nonvolatile memory device.
 19. The method of claim 17, wherein the zone configuration information is provided from an external device.
 20. The method of claim 19, further comprising: determining whether the zone configuration is required. 